Integrated circuit having angled conductive feature

ABSTRACT

An integrated circuit includes a first gate electrode structure extending in a first direction. The integrated circuit includes a second gate electrode structure extending in the first direction and separated in a second direction from the first gate electrode structure. The integrated circuit includes a conductive feature. The conductive feature includes a first section electrically connected to the second portion, a second section electrically connected to the second gate structure, and a third section electrically connecting the first section and the second section, wherein the third section extends in a third direction angled with respect to both the first direction and the second direction.

PRIORITY CLAIM

The present application is a continuation of U.S. Application No.17/317,216, filed May 11, 2021, which is a continuation of U.S.Application No. 16/722,324, filed Jan. 16, 2020, now U.S. Pat. No.11,024,622, issued Jun. 1, 2021, which is a continuation of U.S.Application No. 15/233,126, filed Aug. 10, 2016, now U.S. Pat. No.10,522,527, issued Dec. 31, 2019, which is a divisional of U.S.Application No. 14/500,528, filed Sep. 29, 2014, now U.S. Pat. No.9,431,381, issued Aug. 30, 2016, which are incorporated herein byreference in their entireties.

BACKGROUND

An integrated circuit (IC) is fabricated according to a set of layoutsusable to form corresponding masks for selectively forming or removingvarious layers of features, such as active regions, gate electrodes,various layers of isolation structures, and/or various layers ofconductive structures. Many fabrication processes are available toincrease the spatial resolution of various layers of features and thusallow layout patterns to have a finer spatial resolution requirement ina corresponding layout. Some approaches usable for increasing thespatial resolution include using one or more fabrication processes suchas ultraviolet lithography, extreme ultraviolet lithography,electron-beam lithography, and/or multiple-patterning. However, in manyapplications, a fabrication process offering a finer spatial resolutionoften comes with a higher cost, lower yield, and/or longer processingtime. Having every layer of features of an IC fabricated by processesoffering the same spatial resolution is not always economicallyfeasible.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a layout diagram of a portion of a circuit in accordance withsome embodiments.

FIG. 1B is a layout diagram of a portion of another circuit inaccordance with some embodiments.

FIGS. 2A-2B are layout diagrams of portions of a circuit in accordancewith some embodiments.

FIGS. 2C-2D are layout diagrams of portions of another circuit inaccordance with some embodiments.

FIGS. 3A-3G are diagrams of example stitching layout patterns inaccordance with some embodiments.

FIGS. 4A-4B are layout diagrams of portions of a circuit in accordancewith some embodiments.

FIGS. 4C-4D are layout diagrams of portions of another circuit inaccordance with some embodiments.

FIG. 5 is a flow chart of a method of processing a gate electrodecutting (CUT) layout in accordance with some embodiments.

FIG. 6 is a block diagram of an integrated circuit designing system inaccordance with some embodiments.

FIG. 7 is a schematic diagram of a switching circuit in accordance withsome embodiments.

FIG. 8 is a layout diagram of a portion of an example layout design ofthe switching circuit of FIG. 7 in accordance with some embodiments.

FIG. 9 is a cross-sectional view of a portion of a resulting switchingcircuit fabricated based the layout design of FIG. 8 in accordance withsome embodiments.

FIGS. 10-14 are layout diagrams of portions of another example layoutdesigns of the switching circuit of FIG. 7 in accordance with someembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature’s relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In accordance with one or more embodiments of the present disclosure, agate electrode layout has a finer spatial resolution than acorresponding gate electrode cutting layout. By merging two gateelectrode cutting layout patterns that are not spaced apart incompliance with the spatial resolution requirement of the gate electrodecutting layout and adding a remedial connecting layout pattern to acorresponding conductive layer for reestablishing an electricalconnection interrupted as a result of the inclusion of the merged gateelectrode cutting layout pattern, the violation of the spatialresolution requirement of the gate electrode cutting layout is resolved.In some embodiments, the system and method disclosed in the presentapplication are applicable to cutting layout usable in conjunction withconductive features other than gate electrodes.

FIGS. 1A-4D are usable to illustrate one or more non-compliancescenarios and corresponding remedial measures. A systematic approach toimplement various remedial measures explained in conjunction with FIGS.1A-4D will be further illustrated in conjunction with the flow chart ofFIG. 5 . FIG. 6 further depicts a system usable to perform the method ofFIG. 5 .

FIG. 1A is a layout diagram 100A of a portion of a circuit in accordancewith some embodiments. Layout diagram 100A includes a plurality of gateelectrode layout patterns 102, 104, 106, 108, and 110 and two gateelectrode cutting (CUT) layout patterns 122 and 124. In someembodiments, gate electrode layout patterns 102, 104, 106, 108, and 110are part of a gate electrode layout, and CUT layout patterns 122 and 124are part of a CUT layout. Other layout patterns and other layout usableto fabricate the circuit are omitted.

Gate electrode layout patterns 102, 104, 106, 108, and 110 are usable tofabricate gate electrode structures. The gate electrode structurescorresponding to gate electrode layout patterns 102, 104, 106, 108, and110 extend along a first direction Y and have a predetermined spatialresolution along a second direction X. In some embodiments, the gateelectrode structures corresponding to gate electrode layout patterns102, 104, 106, 108, and 110 are fabricated using a multiple patterningtechnology or other suitable processes offering the predeterminedspatial resolution. In some embodiments, the gate electrode structurescorresponding to gate electrode layout patterns 102, 104, 106, 108, and110 are polysilicon structures. In some embodiments, the polysiliconstructures corresponding to gate electrode layout patterns 102, 104,106, 108, and 110 are further replaced by metallic materials to becomemetallic gate electrodes.

CUT layout patterns 122 and 124 are aligned along the X direction. CUTlayout patterns 122 and 124 correspond to carve-out portions (e.g.,regions 104 a and 108 a) of the gate electrode structures fabricatedaccording to gate electrode layout patterns 104 and 108. In someembodiments, the CUT layout is usable in conjunction with one or moreprocesses that do not offer as fine spatial resolution as the one ormore processes for fabricating the gate electrode structures. As aresult, the CUT layout has a predetermined spatial resolutionrequirement, and the spatial resolution of the gate electrode structuresis finer than the spatial resolution requirement of the CUT layout inFIG. 1A.

In FIG. 1A, a minimum distance D₁ between CUT layout patterns 122 and124 is less than a predetermined threshold distance. Therefore, CUTlayout patterns 122 and 124 are too close to be in compliance with thespatial resolution requirement of the CUT layout. In some embodiments,CUT layout patterns 122 and 124 are too close to be implemented using asingle mask. Further modification of the CUT layout in order to resolvethe non-compliance of CUT layout patterns 122 and 124 will beillustrated in conjunction with one or more of the following Figures.

FIG. 1B is a layout diagram 100B of a portion of another circuit inaccordance with some embodiments. Components in FIG. 1B that are thesame or similar to those in FIG. 1A are given the same referencenumbers, and detailed description thereof is thus omitted.

Layout diagram 100B includes a plurality of gate electrode layoutpatterns 102, 104, 106, 108, and 110 and two CUT layout patterns 132 and134 corresponding to CUT layout patterns 122 and 124 in FIG. 1 . In someembodiments, gate electrode layout patterns 102, 104, 106, 108, and 110are part of a gate electrode layout, and CUT layout patterns 132 and 134are part of a CUT layout. Other layout patterns and other layout areusable to fabricate the circuit are omitted.

Compared with layout diagram 100A, CUT layout patterns 132 and 134 arenot aligned along the X direction, i.e., they correspond to differenty-coordinates. CUT layout patterns 132 and 134 correspond to carve-outportions (e.g., regions 104 b and 108 b) of the gate electrodestructures fabricated according to gate electrode layout patterns 104and 108. In some embodiments, the spatial resolution of the gateelectrode structures is finer than the spatial resolution requirement ofthe CUT layout in FIG. 1B.

In FIG. 1B, a minimum distance D₂ between CUT layout patterns 132 and134 is less than a predetermined threshold distance. Therefore, CUTlayout patterns 132 and 134 are too close to be in compliance with thespatial resolution requirement of the CUT layout. Further modificationof the CUT layout in order to resolve the non-compliance of CUT layoutpatterns 132 and 134 will be illustrated in conjunction with one or moreof the following Figures.

FIG. 2A is a layout diagram 200A of a portion of a circuit in accordancewith some embodiments. Layout diagram 200A depicts an example approachto modify the CUT layout in order to resolve the non-compliance of CUTlayout patterns 122 and 124 in FIG. 1A. Components in FIG. 2A that arethe same or similar to those in FIG. 1A are given the same referencenumbers, and a detailed description thereof is thus omitted.

In FIG. 2A, a stitching layout pattern 202 is introduced to connect CUTlayout patterns 122 and 124 into a merged CUT layout pattern 204. MergedCUT layout pattern 204 is included in the CUT layout in place of CUTlayout patterns 122 and 124. Merged CUT layout pattern 204 also makes itpossible to avoid separating two layout patterns by a distance D₁ thatis smaller than the spatial resolution requirement of the CUT layout.Thus, the inclusion of merged CUT layout pattern 204 makes it possibleto resolve the non-compliance of CUT layout patterns 122 and 124.Stitching layout pattern 202 has an I shape extending along thedirection X. In some embodiments, stitching layout pattern 202 has ashape other than the I shape extending along the direction X.

Stitching layout pattern 202 further corresponds to a carve-out portion(e.g., region 106 a) of the gate electrode structure fabricatedaccording to gate electrode layout pattern 106. Carve-out region 106 ais thus aligned with carve-out regions 104 a and 108 a along directionX. The gate electrode structure fabricated according to gate electrodelayout pattern 106 is thus divided into two portions (corresponding toregions 106 b and 106 c) separated by the carve-out portioncorresponding to region 106 a. However, compared with the originallayout as depicted in FIG. 1A, the two portions (corresponding toregions 106 b and 106 c) of the gate electrode fabricated according tolayout pattern 106 are meant to be electrically connected.

FIG. 2B is a layout diagram 200B of a portion of the circuit of FIG. 2Ain accordance with some embodiments. Layout diagram 200B depicts anexample approach to further modify a conductive layer layout toreestablish the electrical connections of one or more gate electrodesthat are interrupted by the inclusion of stitching layout pattern 202.Components in FIG. 2B that are the same or similar to those in FIG. 2Aare given the same reference numbers, and detailed description thereofis thus omitted.

Layout diagram 200B depicts that a remedial connecting layout pattern206 is added to a conductive layer layout usable for fabricating the IC.Remedial connecting layout pattern 206 is usable to fabricate aconductive feature electrically connecting two portions (correspondingto regions 106 b and 106 c) of the gate electrode structure fabricatedaccording to layout pattern 106. Remedial connecting layout pattern 206has an I shape extending along the direction Y and partially overlapsthe regions 106 b and 106 c of gate electrode layout pattern 106. Insome embodiments, remedial connecting layout pattern 206 has a shapeother than the I shape extending along the direction Y.

FIG. 2C is a layout diagram 200C of a portion of a circuit in accordancewith some embodiments. Layout diagram 200C depicts an example approachto modify the CUT layout in order to resolve the non-compliance of CUTlayout patterns 132 and 134 in FIG. 1B. Components in FIG. 2C that arethe same or similar to those in FIG. 1B are given the same referencenumbers, and detailed description thereof is thus omitted.

In FIG. 2C, a stitching layout pattern 212 is introduced to connect CUTlayout patterns 132 and 134 into a merged CUT layout pattern 214. MergedCUT layout pattern 214 is included in the CUT layout in place of CUTlayout patterns 132 and 134. Merged CUT layout pattern 214 also makes itpossible to avoid separating two layout patterns with a distance D₂ thatis smaller than the spatial resolution requirement of the CUT layout.Thus, the inclusion of merged CUT layout pattern 214 makes it possibleto resolve the non-compliance of CUT layout patterns 132 and 134.Stitching layout pattern 212 has an L shape including one leg extendingalong the direction X and another leg extending along the direction Y.In some embodiments, stitching layout pattern 212 has a shape other thanthe L shape depicted in FIG. 2C.

Stitching layout pattern 212 further corresponds to a carve-out portion(e.g., region 106 a′) of the gate electrode structure fabricatedaccording to gate electrode layout pattern 106. Carve-out region 106 a′is thus aligned with carve-out region 104 b but not carve-out region 108b along direction X. The gate electrode structure fabricated accordingto gate electrode layout pattern 106 includes two portions(corresponding to regions 106 b′ and 106 c′) separated by the carve-outportion corresponding to region 106 a′. However, compared with theoriginal layout as depicted in FIG. 1B, the two portions (correspondingto regions 106 b′ and 106 c′) of the gate electrode fabricated accordingto layout pattern 106 are meant to be electrically connected.

FIG. 2D is a layout diagram 200D of a portion of the circuit of FIG. 2Cin accordance with some embodiments. Layout diagram 200D depicts anexample approach to modify a conductive layer layout to reestablish theelectrical connection of one or more gate electrodes that areinterrupted by the inclusion of stitching layout pattern 212. Componentsin FIG. 2D that are the same or similar to those in FIG. 2C are giventhe same reference numbers, and a detailed description thereof is thusomitted.

Layout diagram 200D depicts that a remedial connecting layout pattern216 is added to a conductive layer layout usable for fabricating the IC.Remedial connecting layout pattern 216 is usable to fabricate aconductive feature electrically connecting two portions (correspondingto regions 106 b′ and 106 c′) of the gate electrode structure fabricatedaccording to layout pattern 106. Remedial connecting layout pattern 216has an I shape extending along the direction Y and partially overlapsthe regions 106 b′ and 106 c′ of gate electrode layout pattern 106. Insome embodiments, remedial connecting layout pattern 216 has a shapeother than the I shape extending along the direction Y.

FIGS. 3A-3G are diagrams of example stitching layout patterns inaccordance with some embodiments. FIG. 3A depicts a stitching layoutpattern 312 that has an I shape extending along the X direction. FIG. 3Bdepicts a stitching layout pattern 314 that has an I shape extendingalong the Y direction. FIG. 3C depicts a stitching layout pattern 316that has an L shape with a first leg 316 a extending along the Xdirection and a second leg 316 b extending along the Y direction. FIG.3D depicts a stitching layout pattern 318 that has a Z shape with acentral portion 318 a extending along the X direction and a first leg318 b and a second leg 318 c at corresponding ends of central portion318 a and extending along the Y direction.

FIG. 3E depicts a stitching layout pattern 322 that has a slanted Ishape. Stitching layout pattern 322 includes a central portion 322 aextending along a direction having a predetermined angle θ to the Ydirection. Stitching layout pattern 322 further includes two contactportions 322 b and 322 c corresponding to conductive structures forconnecting two different gate structures or conductive structures thatextend along the Y direction. FIG. 3F depicts a stitching layout pattern324 that has a J shape with a central portion 324 a extending along theY direction and a first leg 324 b and a second leg 324 c atcorresponding ends of central portion 324 a and extending along the Xdirection. Legs 324 b and 324 c include contact portions 324 d and 324 ecorresponding to conductive structures for connecting two different gatestructures or conductive structures that extend along the Y direction.

FIG. 3G depicts a stitching layout pattern 326 that has a slanted Ishape. Stitching layout pattern 326 includes a central portion 326 aextending along a direction having a predetermined angle θ′ to the Ydirection. Stitching layout pattern 326 further includes two contactportions 326 b and 326 c corresponding to conductive structures forconnecting two different gate structures or conductive structures thatextend along the Y direction. Compared with stitching layout pattern 322in FIG. 3E, central portion 326 a and contact portions 326 b and 326 care merged as a single convex polygon.

In some embodiments, a stitching layout pattern has a shape of a graphiccombination of one or more of stitching layout patterns 312, 314, 316,318, 322, 324, and 326. In some embodiments, a stitching layout patternis a mirrored image of stitching layout patterns 312, 314, 316, 318,322, 324, and 326. In some embodiments, a stitching layout patterncorresponds to stitching layout patterns 312, 314, 316, 318, 322, 324,and 326, rotated by a predetermined angle.

FIG. 4A is a layout diagram 400A of a portion of a circuit in accordancewith some embodiments. Components in FIG. 4A that are the same orsimilar to those in FIG. 1A are given the same reference numbers, anddetailed description thereof is thus omitted.

Compared with layout diagram 100A, the conductive layer layout where theremedial connecting layout pattern 206 would be included already haslayout patterns 402 and 404. Layout pattern 402 corresponds to forming aconductive structure connecting a portion of the gate electrodecorresponding to layout pattern 108 and a first portion (correspondingto region 106 b in FIG. 2B) of the gate electrode corresponding tolayout pattern 106. Layout pattern 404 corresponds to forming anotherconductive structure connecting a portion of the gate electrodecorresponding to layout pattern 104 and a second portion (correspondingto region 106 c in FIG. 2B) of the gate electrode corresponding tolayout pattern 106. An I shape layout pattern 406 is generated as atentative remedial connecting layout pattern corresponding to remedialconnecting layout pattern 206. However, a minimum distance D₃ betweententative remedial connecting layout pattern 406 and layout pattern 402and a minimum distance D₄ between tentative remedial connecting layoutpattern 406 and layout pattern 404 are not in compliance with a spatialresolution requirement of the conductive layer layout.

FIG. 4B is a layout diagram 400B of a portion of the circuit of FIG. 4Ain accordance with some embodiments. Layout diagram 400B depicts anexample approach to further modify the conductive layer layout toresolve the non-compliance of layout patterns of the conductive layerlayout as a result of introducing tentative remedial connecting layoutpattern 406. Components in FIG. 4B that are the same or similar to thosein FIG. 4A are given the same reference numbers, and detaileddescription thereof is thus omitted. In FIG. 4B, a revised remedialconnecting layout pattern 412 is generated by merging tentative remedialconnecting pattern 406 and layout patterns 402 and 404. Revised remedialconnecting layout pattern 412 makes it possible to avoid gapscorresponding to distance D₃ and distance D₄, and thus makes it possibleto resolve the non-compliance of the spatial resolution requirement ofthe conductive layer layout.

In the embodiment depicted in FIG. 4B, remedial connecting layoutpattern 412 has a Z shape as illustrated in conjunction with FIG. 3D. Insome embodiments, remedial connecting layout pattern 412 is replacedwith a connecting layout pattern having a slanted I shape as illustratedin conjunction with FIG. 3E or FIG. 3G, or a J shape as illustrated inconjunction with FIG. 3F.

FIG. 4C is a layout diagram 400C of a portion of another circuit inaccordance with some embodiments. Components in FIG. 4C that are thesame or similar to those in FIG. 4A are given the same referencenumbers, and detailed description thereof is thus omitted.

Compared with layout diagram 400A, the conductive layer layout where theremedial connecting layout pattern 206 would be included already haslayout patterns 408 and 404, and layout pattern 408 does notelectrically connect the gate electrode corresponding to layout pattern108 and the gate electrode corresponding to layout pattern 106.Moreover, a distance D₅ between tentative remedial connecting layoutpattern 406 and layout pattern 408 is not in compliance with a spatialresolution requirement of the conductive layer layout.

FIG. 4D is a layout diagram 400D of a portion of the circuit of FIG. 4Cin accordance with some embodiments. Layout diagram 400D depicts anexample approach to further modify the conductive layer layout toresolve the non-compliance of layout patterns of the conductive layerlayout as a result of introducing tentative remedial connecting layoutpattern 406. Components in FIG. 4D that are the same or similar to thosein FIG. 4C are given the same reference numbers, and detaileddescription thereof is thus omitted.

In FIG. 4D, a revised remedial connecting layout pattern 414 isgenerated by merging tentative remedial connecting layout pattern 406and layout pattern 404 in a manner similar to that illustrated inconjunction with FIG. 4B. Layout pattern 408 is shifted further awayfrom the region corresponding to tentative remedial connecting layoutpattern 406 to become layout pattern 416. Also, to further adjustinglayout pattern 408 and revised remedial connecting layout pattern 414 tobe further away from each other, a revised CUT layout pattern 422 isintroduced in place of merged CUT layout pattern 204 in order to allowan upper edge 414 a of revised remedial connecting layout pattern 414 tobe shifted further away from the region corresponding to layout pattern408.

The resulting conductive layout includes layout patterns 414 and 416 inplace of layout patterns 404, 406, and 408, and a distance D₆ betweenlayout pattern 414 and layout pattern 416 is in compliance with thespatial resolution requirement of the conductive layout. In someembodiments, if the distance D₆ between layout pattern 414 and layoutpattern 416 is still not in compliance with the spatial resolutionrequirement of the conductive layout, a circuit engineer or a layoutengineer of the circuit/layout of FIG. 4D is notified, and a manualinspection and revision of the circuit and/or the corresponding layoutare performed.

FIG. 5 is a flow chart of a method 500 of processing a gate electrodecutting (CUT) layout in accordance with some embodiments. FIG. 5 will beillustrated in conjunction with the examples depicted in FIGS. 1A-4D. Itis understood that additional operations may be performed before,during, and/or after the method 500 depicted in FIG. 5 , and that someother processes may only be briefly described herein.

The process begins with operation 510, where a layout design usable forfabricating an integrated circuit (IC) is received. The layout designincludes a gate electrode layout usable to fabricate gate electrodestructures and an original gate electrode cutting (CUT) layoutcorrespond to various carve-out portions of the gate electrodestructures. In some embodiments, the layout design further includes anoriginal conductive layer layout usable to fabricate a layer ofconductive features above the gate electrode structures. In someembodiments, the gate electrode layout includes layout patterns such aslayout patterns 102, 104, 106, 108, and 110 in FIGS. 1A-2D and 4A-4D. Insome embodiments, the original CUT layout includes CUT layout patterns122 and 124 in FIG. 1A or CUT layout patterns 132 and 134 in FIG. 1B.

The process proceeds to operation 520, where two CUT layout patterns ofthe original CUT layout are selected for further processing. In oneexample as depicted in FIG. 1A, CUT layout patterns 122 and 124 areselected to be further processed according to various operationsconsistent with the method 500. In another example as depicted in FIG.1B, CUT layout patterns 132 and 134 are selected to be further processedaccording to various operations consistent with the method 500.

The process proceeds to operation 530 to determine if the two selectedCUT layout patterns are in compliance with a predetermined spatialresolution requirement of the CUT layout. In some embodiments, thepredetermined spatial resolution requirement includes a predeterminedthreshold distance. Thus, the two selected CUT layout patterns aredetermined to be in compliance with the predetermined spatial resolutionrequirement if a distance between the two selected CUT layout patternsis equal to or greater than the predetermined threshold distance. Insome embodiments, if the distance between the two selected CUT layoutpatterns is less than the predetermined threshold distance, the twoselected CUT layout patterns are determined to be not in compliance withthe predetermined spatial resolution requirement. For example, in someembodiments, operation 520 includes checking if a distance D₁ betweenCUT layout patterns 122 and 124 is less than the predetermined thresholddistance. In some embodiments, operation 520 includes checking if adistance D₂ between CUT layout patterns 132 and 134 is less than thepredetermined threshold distance.

In operation 530, the process is further branched into two differentpaths. If it is determined in operation 530 that the selected CUT layoutpatterns are in compliance with the spatial resolution requirement ofthe CUT layout, the process proceeds to operation 540 to determine ifall CUT layout patterns have been checked for their compliance with thespatial resolution requirement of the CUT layout. If it is determined inoperation 530 that the CUT layout patterns are not in compliance withthe spatial resolution requirement of the CUT layout, the processproceeds to operation 550 for further processes.

In operation 550, a merged CUT layout pattern is generated based on theselected CUT layout patterns and a stitching layout pattern connectingthe selected CUT layout patterns. Based on the merged CUT layoutpattern, a modified CUT layout is generated by replacing the selectedCUT layout patterns with the merged CUT layout pattern. In one exampleas depicted in FIG. 2A, a merged CUT layout pattern 204 is generated byconnecting CUT layout patterns 122 and 124 with stitching layout pattern202. In another example as depicted in FIG. 2C, a merged CUT layoutpattern 214 is generated by connecting CUT layout patterns 132 and 134with stitching layout pattern 212.

In some embodiments, as illustrated in conjunction with FIGS. 3A-3G, thestitching layout pattern usable in operation 550 has a shape includingan I shape, such as stitching layout patterns 312 and 314; an L shape,such as stitching layout pattern 316; a Z shape, such as stitchinglayout pattern 318; an slanted I shape, such as stitching layoutpatterns 322 and/or 326; or a J shape, such as stitching layout pattern324.

After operation 550, the process proceeds to operation 560, where aremedial connecting layout pattern is added to the conductive layerlayout. The remedial connecting layout pattern corresponds tofabricating a conductive feature electrically connecting two portions ofthe gate electrode structure that are separated by the carve-out portiondefined based on the stitching layout pattern. In one example asdepicted in FIG. 2B, remedial connecting layout pattern 206 is added forelectrically connecting portions of the gate electrode structurecorresponding to regions 106 b and 106 c. In another example as depictedin FIG. 2D, remedial connecting layout pattern 216 is added forelectrically connecting portions of the gate electrode structurecorresponding to regions 106 b′ and 106 c′.

In some embodiments, after generating the remedial connecting layoutpattern, operation 560 further includes checking if the remedialconnecting layout pattern and other layout pattern of the conductivelayer layout are in compliance with a predetermined spatial resolutionrequirement of the conductive layer layout. In some embodiments, if theinclusion of the remedial connecting layout pattern would render theconductive layer layout non-compliance with the spatial resolutionrequirement of the conductive layer layout, the process proceeds tooperation 570 to notify a circuit designer and/or a layout designer thenon-compliance of the remedial connecting layout pattern.

In some embodiments, operation 560 further includes adjusting layoutpatterns of the conductive layer layout to resolve the non-compliance ofthe predetermined spatial resolution requirement of the conductive layerlayout. In some embodiments, an original conductive layout pattern andthe remedial connecting layout pattern are merged to become a modifiedremedial connecting layout pattern in place of the conductive layoutpattern, if electrically connecting the conductive featurescorresponding to the remedial connecting layout pattern and the originalconductive layout pattern is consistent with a circuit schematic of theIC. For example, as depicted in FIG. 4B, a modified remedial connectinglayout pattern 412 is generated by merging the remedial connectinglayout pattern 406 and ordinal conductive layout patterns 402 and 404.For another example, as depicted in FIG. 4D, a modified remedialconnecting layout pattern 414 is generated by merging the remedialconnecting layout pattern 406 and ordinal conductive layout pattern 404.

In some embodiments, an original conductive layout pattern and theremedial connecting layout pattern are adjusted to be further away fromeach other, if electrically connecting the conductive featurescorresponding to the remedial connecting layout pattern and the originalconductive layout pattern is inconsistent with the circuit schematic ofthe IC.

In one example as depicted in FIG. 4D, conductive layout pattern 408 isshifted further away from the region corresponding to remedialconnecting layout pattern 406. Also, as depicted in FIG. 4D, modifiedremedial connecting layout pattern 414 is shaped to be further away fromthe region corresponding to conductive layout pattern 408. In someembodiments, in order to facilitate the adjustment of the shape ofmodified remedial connecting layout pattern 414, a shape of the mergedCUT layout pattern 204 is further adjusted to become adjusted merged CUTlayout pattern 422, which is further away from a region corresponding tothe conductive layout pattern 408.

In some embodiments, if the additional adjustment measures asillustrated in conjunction with FIGS. 4B and 4D still fail to make themodified conductive layer layout to be in compliance with the spatialresolution requirement thereof, the process proceeds to operation 570 tonotify a circuit designer and/or a layout designer the non-compliance ofthe remedial connecting layout pattern.

In operation 570, in some embodiments, after the circuit designer and/orthe layout designer has been notified about the non-compliance of theremedial connecting layout pattern, the process stops and the circuitdesigner and/or the layout designer will manually revise the circuitschematic or the layout of the IC. In some embodiments, after thecircuit designer and/or the layout designer has been notified about thenon-compliance of the remedial connecting layout pattern, the processproceeds to operation 520 to check other CUT layout patterns, and thecircuit designer and/or the layout designer will manually revise thecircuit schematic or the layout of the IC after all CUT layout patternshave been processed according to operations 520, 530, and/or 540.

Moreover, in operation 540, the process determines if all CUT layoutpatterns have been checked for their compliance with the spatialresolution requirement of the CUT layout. If it is determined inoperation 540 that all CUT layout patterns has been checked, the processstops at block 580. If it is determined in operation 540 that one ormore CUT layout patterns has not been checked, the process proceeds tooperation 520. In some embodiments, operations 520, 530, 550, and 560are thus performed repetitively on all CUT layout patterns of the CUTlayout.

FIG. 6 is a block diagram of an integrated circuit (IC) designing system600 in accordance with some embodiments. IC designing system 600includes a first computer system 610, a second computer system 620, anetworked storage device 630, and a network 640 connecting the firstcomputer system 610, the second computer system 620, and the networkedstorage device 630. In some embodiments, one or more of the secondcomputer system 620, the storage device 630, and the network 640 areomitted.

The first computer system 610 includes a hardware processor 612communicatively coupled with a non-transitory, computer readable storagemedium 614 encoded with, i.e., storing, a set of instructions 614 a, acircuit schematic 614 b, a circuit layout 614 c, a modified layout 614d, or any intermediate data 614 e for executing the set of instructions614 a. The processing unit 612 is electrically and communicativelycoupled with the computer readable storage medium 614. The processingunit 612 is configured to execute the set of instructions 614 a encodedin the computer readable storage medium 614 in order to cause thecomputer 610 to be usable as an IC designing system, includingfunctionalities such as checking CUT layout patterns, merging CUT layoutpatterns, or generating remedial connecting layout patterns consistentwith the embodiments of FIGS. 1A-5 .

In some embodiments, the set of instructions 614 a, the circuitschematic 614 b, the circuit layout 614 c, the modified layout 614 d, orthe intermediate data 614 e are stored in a non-transitory storagemedium other than storage medium 614. In some embodiments, some or allof the set of instructions 614 a, the circuit schematic 614 b, thecircuit layout 614 c, the modified layout 614 d, or the intermediatedata 614 e are stored in a non-transitory storage medium in networkedstorage device 630 or second computer system 620. In such case, some orall of the set of instructions 614 a, the circuit schematic 614 b, thecircuit layout 614 c, the modified layout 614 d, or the intermediatedata 614 e stored outside computer 610 is accessible by the processingunit 612 through the network 640.

In some embodiments, the processor 612 is a central processing unit(CPU), a multi-processor, a distributed processing system, anapplication specific integrated circuit (ASIC), and/or a suitableprocessing unit.

In some embodiments, the computer readable storage medium 614 is anelectronic, magnetic, optical, electromagnetic, infrared, and/or asemiconductor system (or apparatus or device). For example, the computerreadable storage medium 614 includes a semiconductor or solid-statememory, a magnetic tape, a removable computer diskette, a random accessmemory (RAM), a read-only memory (ROM), a rigid magnetic disk, and/or anoptical disk. In some embodiments using optical disks, the computerreadable storage medium 614 includes a compact disk-read only memory(CD-ROM), a compact disk-read/write (CD-R/W), and/or a digital videodisc (DVD).

The computer system 610 further includes, in at least some embodiments,an input/output interface 616 and a display unit 617. The input/outputinterface 616 is coupled to the processor 612 and allows the circuitdesigner to manipulate the first computer system 610. In at least someembodiments, the display unit 617 displays the status of executing theset of instructions 614 a and, in at least some embodiments, provides aGraphical User Interface (GUI). In at least some embodiments, thedisplay unit 617 displays the status of executing the set ofinstructions 614 a in a real time manner. In at least some embodiments,the input/output interface 616 and the display 617 allow an operator tooperate the computer system 610 in an interactive manner.

In at least some embodiments, the computer system 610 also includes anetwork interface 618 coupled to the processor 612. The networkinterface 618 allows the computer system 610 to communicate with thenetwork 640, to which one or more other computer systems are connected.The network interface includes wireless network interfaces such asBLUETOOTH, WIFI, WIMAX, GPRS, or WCDMA; or wired network interface suchas ETHERNET, USB, or IEEE-1394.

In some embodiments, one or more of the features illustrated above inconjunction with FIGS. 1A-6 are usable in the examples illustrated inconjunction with FIGS. 7-14 .

FIG. 7 is a schematic diagram of a switching circuit 700 in accordancewith some embodiments. Switching circuit 700 includes a first node 712,a second node 714, a third node 716, a first P-type transistor 720, afirst N-type transistor 730, a second P-type transistor 740, and asecond N-type transistor 750. First P-type transistor 720 and firstN-type transistor 730 form a first transmission gate between nodes 712and 714. The first transmission gate is configured to electricallycouple nodes 712 and 714 if control signal CTRL1 is logically high andcontrol signal CTRL2 is logically low. Second P-type transistor 740 andsecond N-type transistor 750 form a second transmission gate betweennodes 712 and 716. The second transmission gate is configured toelectrically couple nodes 712 and 716 if control signal CTRL2 islogically high and control signal CTRL1 is logically low.

First P-type transistor 720 includes a gate 722, a first source or drain(also referred to as “source/drain” or “S/D”) terminal 724, and a secondS/D terminal 726. Gate 722 is configured to receive control signalCTRL2. First S/D terminal 724 is electrically coupled with node 714.Second S/D terminal 726 is electrically coupled with node 712.

First N-type transistor 730 includes a gate 732, a first S/D terminal734, and a second S/D terminal 736. Gate 732 is configured to receivecontrol signal CTRL1. First S/D terminal 734 is electrically coupledwith node 714 and the first S/D terminal 724 of transistor 720. SecondS/D terminal 736 is electrically coupled with node 712 and the secondS/D terminal 726 of transistor 720.

Second P-type transistor 740 includes a gate 742, a first S/D terminal744, and a second S/D terminal 746. Gate 742 is configured to receivecontrol signal CTRL1. First S/D terminal 744 is electrically coupledwith node 716. Second S/D terminal 726 is electrically coupled with node712 and the second S/D terminal 726 of transistor 720.

Second N-type transistor 750 includes a gate 752, a first S/D terminal754, and a second S/D terminal 756. Gate 752 is configured to receivecontrol signal CTRL2. First S/D terminal 754 is electrically coupledwith node 716 and the first S/D terminal 744 of transistor 740. SecondS/D terminal 756 is electrically coupled with node 712 and the secondS/D terminal 746 of transistor 740.

FIG. 8 is a layout diagram of a portion of an example layout design 800of the switching circuit 700 of FIG. 7 in accordance with someembodiments. Layout design 800 includes a first oxide definition (OD)layout pattern 812; a second OD layout pattern 814; a set of layoutpatterns 822, 823, 824, 825, 826, and 828 extending along a direction Yfor forming corresponding conductive features in a first conductivelayer; a set of layout patterns 832, 834, and 836 extending along thedirection Y for forming corresponding conductive features in a secondconductive layer; a layout pattern 840 extending along a direction A forforming a corresponding conductive feature in a third conductive layerbetween the first conductive layer and the second conductive layer; anda set of layout patterns 852-857 extending along a direction X forforming corresponding conductive features in a fourth conductive layerover the first, second, and third conductive layers. Layout design 800also includes a layout pattern 860 corresponding to forming a conductivefeature extending along direction Y.

The conductive feature fabricated according to layout pattern 823 isusable as the gate of first P-type transistor 720 in FIG. 7 . Theconductive feature fabricated according to layout pattern 824 is usableas the gate of first N-type transistor 730. The conductive featurefabricated according to layout pattern 825 is usable as the gate ofsecond P-type transistor 740. The conductive feature fabricatedaccording to layout pattern 826 is usable as the gate of second N-typetransistor 750.

The conductive feature fabricated according to layout pattern 832 andthe OD region formed according to layout pattern 812 are usable to formthe S/D terminal 724 of transistor 720. The conductive featurefabricated according to layout pattern 832 and the OD region formedaccording to layout pattern 814 are usable to form the S/D terminal 734of transistor 730. The conductive feature fabricated according to layoutpattern 834 and the OD region formed according to layout pattern 812 areusable to form the S/D terminal 726 of transistor 720 and the S/Dterminal 746 of transistor 740. The conductive feature fabricatedaccording to layout pattern 834 and the OD region formed according tolayout pattern 814 are usable to form the S/D terminal 736 of transistor730 and the S/D terminal 756 of transistor 750. The conductive featurefabricated according to layout pattern 836 and the OD region formedaccording to layout pattern 812 are usable to form the S/D terminal 744of transistor 740. The conductive feature fabricated according to layoutpattern 836 and the OD region formed according to layout pattern 814 areusable to form the S/D terminal 754 of transistor 750.

The conductive feature formed according to layout pattern 840electrically connects gates fabricated according to layout patterns 825and 824. Therefore, conductive feature formed according to layoutpattern 840 corresponds to the signal path configured to receive controlsignal CTRL1 in FIG. 7 . Layout pattern 840 extends along the directionA, and direction A and direction Y have an angle θ ranging from 20degrees to 70 degrees. In some embodiments, layout pattern 840corresponds to layout pattern 322 in FIG. 3E. In some embodiments,layout pattern 840 is replaced by a layout pattern corresponding tolayout pattern 324 in FIG. 3F. In some embodiments, layout pattern 840is replaced by a layout pattern corresponding to layout pattern 326 inFIG. 3G.

Layout design 800 further includes via layout patterns 872, 874, 876,878, and 879 and 882, 884, and 886 corresponding to one or more of viaplug layers. The via plugs fabricated based on via layout patterns 872,874, 876, 878, and 879 and 882, 884, and 886 and the conductive featuresfabricated based on layout patterns 832-836, 840, and 852-856 togetherconnected the transistor fabricated according to layout patterns 812,814, and 823-826 to for a circuit as depicted in FIG. 7 .

Layout pattern 872 is usable to form a via plug connecting featurescorresponding to layout patterns 823 and 853. Layout pattern 874 isusable to form a via plug connecting features corresponding to layoutpatterns 840 and 885. Layout pattern 876 is usable to form a via plugconnecting features corresponding to layout patterns 826 and 856. Layoutpattern 878 is usable to form a via plug connecting featurescorresponding to layout patterns 860 and 853. Layout pattern 879 isusable to form a via plug connecting features corresponding to layoutpatterns 860 and 856.

Layout pattern 882 is usable to form a via plug connecting featurescorresponding to layout patterns 834 and 854. Layout pattern 884 isusable to form a via plug connecting features corresponding to layoutpatterns 836 and 852. Layout pattern 886 is usable to form a via plugconnecting features corresponding to layout patterns 832 and 857.

FIG. 9 is a cross-sectional view of a portion of a resulting switchingcircuit 900 fabricated based the layout design of FIG. 8 , taken alongreference line B-B′, in accordance with some embodiments. Switchingcircuit 900 includes a substrate 910, an insulation layer 920, apolysilicon structure 932 fabricated according to layout pattern 824, apolysilicon structure 934 fabricated according to layout pattern 825, aconductive structure 940 fabricated according to layout pattern 840, aconductive structure 950 fabricated according to layout pattern 834, andconductive features 962, 964, and 966 fabricated according to layoutpatterns 855, 854, and 853. Switching circuit 900 further includes a viaplug 972 fabricated according to layout patterns 874 and connectingconductive features 940 and 962; and a via plug 974 fabricated accordingto layout patterns 882 and connecting conductive features 950 and 964.

In some embodiments, the conductive features 962, 964, and 966 and otherfeatures (not shown) disposed above the conductive features 962, 964,and 966 are fabricated by a back-end-of-line (BEOL) process, and anyfeature below conductive features 962, 964, and 966 are fabricated byeither a front-end-of-line (FEOL) process or a middle-end-of-line (MEOL)process.

In some embodiments, the first conductive layer corresponds to apolysilicon layer or a layer of metal gate structures. In someembodiments, the second conductive layer corresponds to a metal layerover OD regions, which is sometimes referred to as a MD layer. In someembodiments, the third conductive layer corresponds to a metal layerover polysilicon or gate structures, which is sometimes referred to as aMP layer. In some embodiments, the fourth conductive layer correspondsto a lowest metal layer fabricated by the BEOL process, which issometimes referred to as a M1 layer.

FIG. 10 is a layout diagram of a portion of another example layoutdesign 1000 of the switching circuit of FIG. 7 in accordance with someembodiments. Components in FIG. 10 that are the same or similar to thosein FIG. 8 are given the same reference numbers, and detailed descriptionthereof is this omitted.

Compared with layout design 800, layout design 1000 does not have layoutpatterns 860 878, and 879. Instead, layout design 1000 includes a layoutpattern 1010 extending along direction A for forming a conductive layerat the third conductive layer and electrically connecting the gatescorresponding to layout patterns 823 and 826 through conductive featurefabricated according to layout pattern 822 and 856. Layout design 1000also includes a via layout pattern 1020 for forming a via plugconnecting conductive features corresponding to layout patterns 822 and856.

FIG. 11 is a layout diagram of a portion of another example layoutdesign 1100 of the switching circuit of FIG. 7 in accordance with someembodiments. Components in FIG. 11 that are the same or similar to thosein FIG. 10 are given the same reference numbers, and detaileddescription thereof is this omitted.

Compared with layout design 1000, layout design 1100 does not havelayout pattern 874. Instead, layout design 1100 includes a via layoutpattern 1110 for forming a via plug connecting conductive featurescorresponding to layout patterns 842 and 853.

FIG. 12 is a layout diagram of a portion of another example layoutdesign 1200 of the switching circuit of FIG. 7 in accordance with someembodiments. Components in FIG. 12 that are the same or similar to thosein FIG. 10 are given the same reference numbers, and detaileddescription thereof is this omitted.

Compared with layout design 1000, layout design 1200 does not havelayout pattern 840. Instead, layout design 1100 includes a layoutpattern 1210 extending along a direction A′. Direction A′ and thedirection Y have an angle θ′ ranging from 20 degrees to 70 degrees.Layout pattern 1210 is usable for fabricating a conductive feature inthe third conductive layer to electrically connect conductive featurescorresponding to layout patterns 825 and 828. Layout design 1200 furtherincludes a via layout pattern 1220 for forming a via plug connectingconductive features corresponding to layout patterns 1210 and 855.

FIG. 13 is a layout diagram of a portion of another example layoutdesign 1300 of the switching circuit of FIG. 7 in accordance with someembodiments. Components in FIG. 13 that are the same or similar to thosein FIG. 12 are given the same reference numbers, and detaileddescription thereof is this omitted.

Compared with layout design 1200, layout design 1300 does not havelayout pattern 882. Instead, layout design 1300 includes a via layoutpattern 1310 for forming a via plug connecting conductive featurescorresponding to layout patterns 834 and 853.

FIG. 14 is a layout diagram of a portion of another example layoutdesign 1400 of the switching circuit of FIG. 7 in accordance with someembodiments.

Layout design 1400 includes a first OD layout pattern 1412; a second ODlayout pattern 1414; a set of layout patterns 1421-1428 extending alongdirection Y for forming corresponding conductive features in a firstconductive layer; a set of layout patterns 1431-1436 extending along thedirection Y for forming corresponding conductive features in a secondconductive layer; a layout pattern 1440 extending along a direction A′for forming a corresponding conductive feature in a third conductivelayer between the first conductive layer and the second conductivelayer; and a set of layout patterns 1452-1457 extending along directionX for forming corresponding conductive features in a fourth conductivelayer over the first, second, and third conductive layers. Layout design1400 further includes layout patterns 1462 and 1464 corresponding toforming conductive features extending along direction X in a fifthconductive layer between the first and second conductive layers.

The conductive feature fabricated according to layout pattern 1424 isusable as the gate of first P-type transistor 720 and the gate of secondN-type transistor 750 in FIG. 7 . The conductive feature fabricatedaccording to layout pattern 1423 is usable as the gate of first N-typetransistor 730. The conductive feature fabricated according to layoutpattern 1426 is usable as the gate of second P-type transistor 740.

The conductive feature fabricated according to layout pattern 1432 andthe OD region formed according to layout pattern 1412 are usable to formthe S/D terminal 724 of transistor 720. The conductive featurefabricated according to layout pattern 1431 and the OD region formedaccording to layout pattern 1414 are usable to form the S/D terminal 734of transistor 730. The conductive feature fabricated according to layoutpattern 1462 is usable to electrically connect the conductive featurescorresponding to layout patterns 1431 and 1432.

The conductive feature fabricated according to layout pattern 1434 andthe OD region formed according to layout pattern 1412 are usable to formthe S/D terminal 726 of transistor 720 and the S/D terminal 746 oftransistor 740. The conductive feature fabricated according to layoutpattern 1433 and the OD region formed according to layout pattern 1414are usable to form the S/D terminal 736 of transistor 730 and the S/Dterminal 756 of transistor 750. The conductive features corresponding tolayout patterns are electrically connected by the conductive featurecorresponding to layout pattern 1454 through via plugs formed based oncorresponding via layout patterns 1470.

The conductive feature fabricated according to layout pattern 1435 andthe OD region formed according to layout pattern 1414 are usable to formthe S/D terminal 754 of transistor 750. The conductive featurefabricated according to layout pattern 1464 is usable to electricallyconnect the conductive features corresponding to layout patterns 1435and 1436.

The conductive feature formed according to layout pattern 1440electrically connects gates fabricated according to layout patterns 1426and 1423 through one or more intermediate conductive featurescorresponding to layout patterns 1428 and 1456. Therefore, conductivefeature formed according to layout pattern 1440 corresponds to thesignal path configured to receive control signal CTRL1 in FIG. 7 .Layout pattern 1440 extends along the direction A′, and direction A anddirection Y have an angle θ′ ranging from 20 degrees to 70 degrees. Insome embodiments, layout pattern 1440 corresponds to a mirror-imageversion of layout pattern 322 in FIG. 3E. In some embodiments, layoutpattern 1440 is replaced by a layout pattern corresponding to layoutpattern 324 in FIG. 3F. In some embodiments, layout pattern 1440 isreplaced by a layout pattern corresponding to layout pattern 326 in FIG.3G.

Layout design 1400 further includes other via layout patterns 1470corresponding to one or more of via plug layers. The via plugsfabricated based on via layout patterns 1470 and the conductive featuresfabricated based on layout patterns 1428, 1431-1436, 1440, 1452-1457,1462, and 1464 together connected the transistor fabricated according tolayout patterns 1424, 1426, and 1423 to for a circuit as depicted inFIG. 7 .

An aspect of this description relates to an integrated circuit. Theintegrated circuit includes a first gate electrode structure extendingin a first direction. The integrated circuit includes a second gateelectrode structure extending in the first direction and separated in asecond direction from the first gate electrode structure. The integratedcircuit includes a conductive feature. The conductive feature includes afirst section electrically connected to the second portion, a secondsection electrically connected to the second gate structure, and a thirdsection electrically connecting the first section and the secondsection, wherein the third section extends in a third direction angledwith respect to both the first direction and the second direction. Insome embodiments, the first section extends beyond a the first gateelectrode structure in the second direction. In some embodiments, thesecond section extends beyond the second gate electrode structure in thesecond direction. In some embodiments, the integrated circuit furtherincludes a third gate electrode structure extending in the firstdirection, wherein the third gate electrode structure is spaced from thefirst gate electrode structure in the first direction. In someembodiments, a length of the second gate electrode structure in thefirst direction is greater than a length of the first gate electrodestructure in the first direction. In some embodiments, the conductivefeature is an integral conductive feature. In some embodiments, an anglebetween the first direction and the third direction ranges from about20-degrees to about 70-degrees.

An aspect of this description relates to an integrated circuit. Theintegrated circuit includes a first active region extending in a firstdirection. The integrated circuit further includes a second activeregion extending in the first direction. The integrated circuit furtherincludes a first gate electrode structure extending in a seconddirection, wherein the first gate electrode structure is part of a firsttransistor, and the first gate electrode structure is spaced from thesecond active region. The integrated circuit further includes a secondgate electrode structure extending in the second direction. Theintegrated circuit further includes a third gate electrode structureextending in the second direction, wherein the third gate electrodestructure is part of a second transistor and a third transistor, and thethird gate electrode structure is between the first gate electrodestructure and the second gate electrode structure. In some embodiments,a length of the third gate electrode structure in the second directionis greater than a length of the first gate electrode structure in thesecond direction. In some embodiments, a length of the third gateelectrode structure in the second direction is greater than a length ofthe second gate electrode structure in the second direction. In someembodiments, a channel of the second transistor is in the first activeregion, and a channel of the third transistor is in the second activeregion. In some embodiments, the second gate electrode is part of afourth transistor. In some embodiments, a channel of the fourthtransistor is in the second active region. In some embodiments, thefirst transistor shares a first source/drain (S/D) with the secondtransistor. In some embodiments, the first transistor shares a secondS/D with the second transistor.

An aspect of this description relates to an integrated circuit. Theintegrated circuit includes a first active region extending in a firstdirection. The integrated circuit includes a second active regionextending in the first direction. The integrated circuit includes afirst gate electrode structure extending in a second direction, whereina first portion of the first gate electrode structure is a first dummystructure. The integrated circuit includes a second gate electrodestructure extending in the second direction, wherein a second portion ofthe second gate electrode structure overlaps the first active region andis part of a first transistor, and a third portion of the second gateelectrode structure is a second dummy structure. The integrated circuitincludes a third gate electrode structure extending in the seconddirection, wherein the third gate electrode structure is part of asecond transistor and a third transistor, and the third gate electrodestructure is between the first gate electrode structure and the secondgate electrode structure. In some embodiments, the first gate electrodestructure overlaps the first active region. In some embodiments, thethird gate electrode structure overlaps the first active region and thesecond active region. In some embodiments, the second portion is alignedwith the third portion in the first direction. In some embodiments, theintegrated circuit includes a fourth gate electrode structure, whereinthe fourth gate electrode structure is part of a fourth transistor, andthe third gate electrode structure is between the third portion and thefourth gate electrode structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit, comprising: a first gateelectrode structure extending in a first direction; a second gateelectrode structure extending in the first direction and separated in asecond direction from the first gate electrode structure; and aconductive feature , wherein the conductive feature comprises: a firstsection electrically connected to the second portion, a second sectionelectrically connected to the second gate structure, and a third sectionelectrically connecting the first section and the second section,wherein the third section extends in a third direction angled withrespect to both the first direction and the second direction.
 2. Theintegrated circuit of claim 1, wherein the first section extends beyonda the first gate electrode structure in the second direction.
 3. Theintegrated circuit of claim 1, wherein the second section extends beyondthe second gate electrode structure in the second direction.
 4. Theintegrated circuit of claim 1, further comprising a third gate electrodestructure extending in the first direction, wherein the third gateelectrode structure is spaced from the first gate electrode structure inthe first direction.
 5. The integrated circuit of claim 1, wherein alength of the second gate electrode structure in the first direction isgreater than a length of the first gate electrode structure in the firstdirection.
 6. The integrated circuit of claim 1, wherein the conductivefeature is an integral conductive feature.
 7. The integrated circuit ofclaim 1, wherein an angle between the first direction and the thirddirection ranges from about 20-degrees to about 70-degrees.
 8. Anintegrated circuit, comprising: a first active region extending in afirst direction; a second active region extending in the firstdirection; a first gate electrode structure extending in a seconddirection, wherein the first gate electrode structure is part of a firsttransistor, and the first gate electrode structure is spaced from thesecond active region; a second gate electrode structure extending in thesecond direction; and a third gate electrode structure extending in thesecond direction, wherein the third gate electrode structure is part ofa second transistor and a third transistor, and the third gate electrodestructure is between the first gate electrode structure and the secondgate electrode structure.
 9. The integrated circuit of claim 8, whereina length of the third gate electrode structure in the second directionis greater than a length of the first gate electrode structure in thesecond direction.
 10. The integrated circuit of claim 8, wherein alength of the third gate electrode structure in the second direction isgreater than a length of the second gate electrode structure in thesecond direction.
 11. The integrated circuit of claim 8, wherein achannel of the second transistor is in the first active region, and achannel of the third transistor is in the second active region.
 12. Theintegrated circuit of claim 8, wherein the second gate electrode is partof a fourth transistor.
 13. The integrated circuit of claim 12, whereina channel of the fourth transistor is in the second active region. 14.The integrated circuit of claim 8, wherein the first transistor shares afirst source/drain (S/D) with the second transistor.
 15. The integratedcircuit of claim 14, wherein the first transistor shares a second S/Dwith the second transistor.
 16. An integrated circuit, comprising: afirst active region extending in a first direction; a second activeregion extending in the first direction; a first gate electrodestructure extending in a second direction, wherein a first portion ofthe first gate electrode structure is a first dummy structure; a secondgate electrode structure extending in the second direction, wherein asecond portion of the second gate electrode structure overlaps the firstactive region and is part of a first transistor, and a third portion ofthe second gate electrode structure is a second dummy structure; and athird gate electrode structure extending in the second direction,wherein the third gate electrode structure is part of a secondtransistor and a third transistor, and the third gate electrodestructure is between the first gate electrode structure and the secondgate electrode structure.
 17. The integrated circuit of claim 16,wherein the first gate electrode structure overlaps the first activeregion.
 18. The integrated circuit of claim 16, wherein the third gateelectrode structure overlaps the first active region and the secondactive region.
 19. The integrated circuit of claim 16, wherein thesecond portion is aligned with the third portion in the first direction.20. The integrated circuit of claim 16, further comprising a fourth gateelectrode structure, wherein the fourth gate electrode structure is partof a fourth transistor, and the third gate electrode structure isbetween the third portion and the fourth gate electrode structure.